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| Advanced Switching Diode ASD355-N Silicon epitaxial planar type Formosa MS 0.106 (2.7) 0.090 (2.3) 0.012(0.3) Typ. Features Small surface mounting type High reliability R0.5 (0.02) Typ. High speed ( trr < 4 ns ) 0.053 (1.35) 0.045 (1.15) 0.035 (0.9) 0.028 (0.7) Mechanical data Case : Molded plastic, JEDEC SOD-323 Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cat hode band Mounting Position : Any Weight : 0.000159 ounce, 0.0045 gram SOD-323 MAXIMUM RATINGS (AT T A=25 oC unless otherwise noted) PARAMETER Repetitive peak reverse voltage Peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature t p < 1s VR = 0 CONDITIONS Symbol V RRM I FSM I FAV PV Tj T STG -55 MIN. TYP. MAX. 100 500.0 100 350 175 +175 UNIT V mA mA mW o o C C ELECTRICAL CHARACTERISTICS (AT T A=25 oC unless otherwise noted) PARAMETER Forward voltage I F = 10mA V R = 25V Reverse current V R = 25V , T j = 150 V R = 80V Breakdown current Diode capacitance Thermal resistance Reverse recovery time I R = 100uA , T P /T = 0.01 T P = 0.3ms V R = 0 , f = 1MHz , V HF = 50mV Junction to ambient I F =10mA, V R =6V, I RR = 0.1 X I R , R L =100 OHM o CONDITIONS Symbol VF IR MIN. TYP. MAX. 1.2 100 50 30 UNIT V nA uA uA V C IR IR V (BR) CD R th JA t rr 100 4.0 pF K/mW 4 ns RATING AND CHARACTERISTIC CURVES (ASD355-N) FIG.1-TYPICAL FORWARD CHARACTERISTICS 1000 FIG.3 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT,(mA) Tj=25 C 100 REVERSE CURRENT, (nA) 1000 Tj=25 C Pulse Width 300us 1% Duty Cycle Scattering Limit 10 100 Scattering Limit 1.0 10 0.1 0 .4 .8 1.2 1.6 2.0 FORWARD VOLT AGE,(V) 1 1 10 REVERSE VOLTAGE 100 FIG.2 - TYPICAL DIODE CAPACITANCE 3.5 10 3.0 3 FIG.4 - REVERSE CURRENT VS JUNCTION TEMPERATURE DIODE CAPACITANCE,(pF) REVERSE CURRENT, (uA) 2.5 2.0 1.5 1.0 0.5 0 10 2 =80 VR 10 V AX /M .V U AL ES 1 =8 VR 0V /T U AL .V YP ES 0.1 1 10 100 1000 10 -1 VR =2 5V / L VA P. TY S UE REVERSE VOLTAGE,(V) 10 -2 0 100 200 o JUNCTION TEMPERATURE ( C) |
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